Aug-17-2001
1
BAS70-02W
1
VES05991
2
Silicon Schottky Diode
G01 General-purpose diode for high-speed switching
G01 Circuit protection
G01 Voltage clamping
G01 High-level detection and mixing
Type Marking Pin Configuration Package
BAS70-02W f
1 = C 2 = A -
SCD80
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage V
R
70 V
Forward current I
F
70 mA
Surge forward current, t G0110 ms I
FSM
100
Total power dissipation
T
S
G01 107°C
P
tot
250 mW
Junction temperature T
j
150 °C
Operating temperature range T
op
-55 ... 125
Storage temperature T
stg
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1)
R
thJS
G01G02170
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance