Nov-04-2002
1
BAS52...
Silicon Schottky Diode
G01 Medium current rectifier Schottky diode
G01 Low forward voltage at 200mA
G01 High reverse voltage
BAS52-02V
G31 G32
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Package Configuration Marking
BAS52-02V SC79 single y
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
R
45 V
Forward current I
F
750 mA
Surge forward current (t = 100µs) I
FSM
2000
Average forward current (50/60Hz, sinus) I
FAV
500
Total power dissipation
T
S
G01 110°C
P
tot
500 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1)
R
thJS
G01 60
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance