LESHAN RADIO COMPANY, LTD.
BAS40LT1–1/2
Schottky Barrier Diode
BAS40LT1
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3
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CASE 318–08, STYLE 11
SOT–23 (TO–236AB)
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40V SCHOTTKY BARRIER DIODES
ANODE
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These Schottky barrier diodes are designed
for high speed switching applications, circuit
protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Min-
iature surface mount package is excellent for
hand held and portable applications where
space is limited.
MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage V
R
40 Volts
Forward Power Dissipation P
F
@ T
A
= 25°C 225 mW
Derate above 25°C 1.8 mW/°C
Operating Junction and Storage
TJ, Tstg –55 to +150 °C
Temperature Range
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Reverse Breakdown Voltage (IR = 10 µA) V(BR)R 40 — Volts
Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT — 5.0 pF
Reverse Leakage (VR = 25 V) IR — 1.0 µAdc
Forward Voltage (IF = 0.1 mAdc) VF — 380 mVdc
Forward Voltage (IF = 30 mAdc) VF — 500 mVdc
Forward Voltage (IF = 100 mAdc) VF — 1.0 Vdc
CATHODE
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