LESHAN RADIO COMPANY, LTD.
BAS40-04LT1–1/2
Dual Series
Schottky Barrier Diode
BAS40-04LT1
1
3
2
CASE 318–08, STYLE 11
SOT–23 (TO–236AB)
*
40V SCHOTTKY BARRIER DIODES
3
CATHODE/ANODE
ANODE
1
CATHODE
2
These Schottky barrier diodes are designed
for high speed switching applications, circuit
protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Min-
iature surface mount package is excellent for
hand held and portable applications where
space is limited.
• Extremely Fast Switching Speed
Low Forward Voltage — 0.50 Volts (Typ)
@ I
F
= 10 mAdc
MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage V
R
40 Volts
Forward Power Dissipation P
F
@ T
A
= 25°C 225 mW
Derate above 25°C 1.8 mW/°C
Operating Junction and Storage
TJ, Tstg –55 to +150 °C
Temperature Range
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Reverse Breakdown Voltage (IR = 10 µA) V(BR)R 40 — Volts
Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT — 5.0 pF
Reverse Leakage (VR = 25 V) IR — 1.0 µAdc
Forward Voltage (IF = 0.1 mAdc) VF — 380 mVdc
Forward Voltage (IF = 30 mAdc) VF — 500 mVdc
Forward Voltage (IF = 100 mAdc) VF — 1.0 Vdc