1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0083C0099C0104C0111C0116C0116C0107C0121 C0066C0097C0114C0114C0105C0101C0114 C0068C0105C0111C0100C0101C0115
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
MAXIMUM RATINGS (T
J
= 150°C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage V
R
40 Volts
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
P
F
225
1.8
mW
mW/°C
Operating Junction and Storage Temperature Range T
J,
T
stg
–55 to +150 °C
DEVICE MARKING
BAS40LT1 = B1
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Reverse Breakdown Voltage
(I
R
= 10 µA)
V
(BR)R
40 — Volts
Total Capacitance
(V
R
= 1.0 V, f = 1.0 MHz)
C
T
— 5.0 pF
Reverse Leakage
(V
R
= 25 V)
I
R
— 1.0 µAdc
Forward Voltage
(I
F
= 0.1 mAdc)
V
F
— 380 mVdc
Forward Voltage
(I
F
= 30 mAdc)
V
F
— 500 mVdc
Forward Voltage
(I
F
= 100 mAdc)
V
F
— 1.0 Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Bergquist Company.
Order this document
by BAS40LT1/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0065C0083C0052C0048C0076C0084C0049
Motorola Preferred Device
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
1
2
3
40 VOLTS
SCHOTTKY BARRIER DIODES
 Motorola, Inc. 1997
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