BAS35
BAS35, Rev. C
BAS35
Small Signal Diode
Absolute Maximum Ratings* T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
2001 Fairchild Semiconductor Corporation
Thermal Characteristics
Electrical Characteristics T
A
= 25°C unless otherwise noted

Symbol

Parameter

Value

Units
V
RRM
Maximum Repetitive Reverse Voltage 120 V
I
F(AV)
Average Rectified Forward Current 200 mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond

1.0
2.0

A
A
T
stg

Storage Temperature Range -55 to +150 °C
T
J

Operating Junction Temperature 150 °C

Symbol

Parameter

Value

Units
P
D
Power Dissipation 350 mW
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
1
2
3
L22
12
3
Connection Diagram
3
1
2
SOT-23

Symbol

Parameter Test Conditions Min

Max

Units
V
R
Breakdown Voltage
I
R
= 1.0 mA 120
V
V
F
Forward Voltage I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 200 mA
I
F
= 400 mA

750
840
900
1.0
1.25
mV
mV
mV
V
V
I
R
Reverse Current V
R
= 90 V
V
R
= 90 V, T
A
= 150°C

100
100
nA
µA
C
T
Total Capacitance
V
R
= 0, f = 1.0 MHz
35 pF
t
rr

Reverse Recovery Time I
F
= I
R
= 10 mA, I
RR
= 1.0 mA,
R
L
= 100 Ω

50 ns