58
Central
Semiconductor Corp.
TM
BAS28
DUAL, ISOLATED HIGH SPEED
SWITCHING DIODE
SOT-143 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BAS28
type is a ultra-high speed silicon switching
diode manufactured by the epitaxial planar
process, in an epoxy molded surface mount
package with isolated dual diodes, designed
for high speed switching applications.
Marking code is A61.
MAXIMUM RATINGS (T
A
=25
o
C)
SYMBOL UNITS
Continuous Reverse Voltage V
R
75 V
Peak Repetitive Reverse Voltage V
RRM
85 V
Continuous Forward Current I
F
250 mA
Peak Repetitive Forward Current I
FRM
250 mA
Forward Surge Current, tp=1 µsec. I
FSM
4000 mA
Forward Surge Current, tp=1 msec. I
FSM
2000 mA
Forward Surge Current, tp=1 sec. I
FSM
1000 mA
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature T
J
,T
stg
-65 to +150
o
C
Thermal Resistance Θ
JA
357
o
C/W
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
R
V
R
=25V, T
A
=150
o
C 30 µA
I
R
V
R
=75V 1.0 µA
I
R
V
R
=75V, T
A
=150
o
C 50 µA
V
F
I
F
=1.0mA 0.715 V
V
F
I
F
=10mA 0.855 V
V
F
I
F
=50mA 1.000 V
V
F
I
F
=150mA 1.250 V
C
T
V
R
=0, f=1 MHz 2.0 pF
t
rr
I
F
=I
R
=10mA, R
L
=100Ω, Rec. to 1.0mA

6.0 ns
Q
s
I
F
=10mA, V
R
=5.0V, R
L
=500Ω 45 pC
V
FR
I
F
=10mA, t
r
=20ns 1.75 V