BAS 28W
Semiconductor Group
Mar-16-19981
Silicon Switching Diode Array
• For high-speed switching applications
• Electrical insulated diodes
VPS05605
4
2
1
3
Type Marking Ordering Code Pin Configuration Package
BAS 28W JTs Q62702-A3466 1 = C1 2 = C2 3 = A2 SOT-3434 = A1
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage V
R
V75
Peak reverse voltage 85V
RM
200Forward current I
F
mA
AI
FS
Surge forward current, t = 1 m s 4.5
Total power dissipation, T
S
= 103 °C mW250P
tot
150Junction temperature °CT
j
Storage temperature T
stg
- 65 ...+150
Thermal Resistance
Junction - ambient
1)
R
thJA
£ 460 K/W
Junction - soldering point R
thJS
£ 190
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm
2
Cu
Semiconductor Group 1 1998-11-01