Feb-21-2003
1
BAS28...
Silicon Switching Diode
G01 For high-speed switching applications
G01 Electrical insulated diodes
BAS28/W
G31
G44G32
G32
G33G34
G44G31
Type Package Configuration Marking
BAS28
BAS28W
SOT143
SOT343
parallel pair
parallel pair
JTs
JTs
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
R
80 V
Peak reverse voltage V
RM
85
Forward current I
F
200 mA
Surge forward current, t = 1 µs I
FS
4.5 A
Total power dissipation
BAS28, T
S
G01 31°C
BAS28W, T
S
G01 103°C
P
tot

330
250
mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1)

BAS28
BAS28W
R
thJS

G01 360
G01 190
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance