BAS28
器件描述：Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：102.03KB，共4页
Sponsor by e络盟器件资料摘要：
Semiconductor Group 1
Silicon Switching Diode Array BAS 28
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking Package
1)
Pin Configuration
BAS 28 Q62702-A77JTs SOT-143
Parameter Symbol Values Unit
Reverse voltage VR 75 V
Forward current IF 200 mA
Junction temperature Tj 150 ˚C
Total power dissipation, TS =31˚C Ptot 330 mW
Storage temperature range Tstg – 65 … + 150
Peak reverse voltage VRM 85
Surge forward current, t = 1 µs IFS 4.5 A
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 500 K/W
Junction - soldering point Rth JS ≤ 360
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm
2
Cu.
a71 For high-speed switching
a71 Electrically insulated diodes
5.91
Silicon Switching Diode Array BAS 28
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking Package
1)
Pin Configuration
BAS 28 Q62702-A77JTs SOT-143
Parameter Symbol Values Unit
Reverse voltage VR 75 V
Forward current IF 200 mA
Junction temperature Tj 150 ˚C
Total power dissipation, TS =31˚C Ptot 330 mW
Storage temperature range Tstg – 65 … + 150
Peak reverse voltage VRM 85
Surge forward current, t = 1 µs IFS 4.5 A
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 500 K/W
Junction - soldering point Rth JS ≤ 360
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm
2
Cu.
a71 For high-speed switching
a71 Electrically insulated diodes
5.91