LESHAN RADIO COMPANY, LTD.
G3–1/2
1
3
2
High Voltage Switching Diode
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V R 250 Vdc
Peak Forward Current I F 200 mAdc
Peak Forward Surge Current I
FM(surge)
625 mAdc
DEVICE MARKING
BAS21LT1 = JS
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
P
D
225 mW
T
A
= 25°C
Derate above 25°C
1.8 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
556 °C/W
Total Device Dissipation
P
D
300 mW
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
2.4 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current I R µAdc
(V R = 200Vdc) — 1.0
(V R = 200Vdc, T J = 150°C) — 100
Reverse Breakdown Voltage
V
(BR)
250 — Vdc
(I BR = 100 µAdc)
Forward Voltage V F mV
(I F = 100 mAdc) — 1000
(I F = 200 mAdc) — 1250
Diode Capacitance
C
D
— 5.0 pF
(V R = 0, f = 1.0 MHz)
Reverse Recovery Time
t
rr
—50 ns
(I F = I R = 30mAdc, R L = 100 Ω)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BAS21LT1
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
3
CATHODE
1
ANODE