Jan-30-2003
1
BAS21...
Silicon Switching Diode
G01 For high-speed switching applications
G01 High breakdown voltage
BAS21UBAS21-03WBAS21
G33
G31G32
G31
G44G31
G32G33
G34G35G36
G44G32 G44G33
G31 G32
Type Package Configuration Marking
BAS21
BAS21U
BAS21-03W
SOT23
SC74
SOD323
single
parallel triple
single
JSs
JSs
D
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
R
200 V
Peak reverse voltage V
RM
250
Forward current I
F
250 mA
Peak forward current I
FM
625
Surge forward current, t = 10 µs I
FS
4 A
Total power dissipation
BAS21, T
S
G01 70°C
BAS21-03W, T
S
G01 124°C
BAS21U, T
S
G01 122°C
P
tot

350
250
250
mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150