BAS21
BAS21
General Purpose High Voltage Diode
Sourced from Process 1H. See MMBD1401 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
W
IV
Working Inverse Voltage 250 V
I
O
Average Rectified Current 200 mA
I
F
DC Forward Current 600 mA
i
f
Recurrent Peak Forward Current 700 mA
i
f(surge)
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
1.0
2.0
A
A
T
stg
Storage Temperature Range -55 to +150 °C
T
J
Operating Junction Temperature 150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
BAS21
P
D
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
ã1998 Fairchild Semiconductor Corporation
SOT-23
3
1
2
29
3
12
2 NC
3
1
CONNECTION DIAGRAM