EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BAS20HT1

器件描述:High Voltage Switching Diode
器件厂商:LRC [Leshan Radio Company]
文件大小:65.23KB,共2页
Sponsor by e络盟
器件资料摘要:
LESHAN RADIO COMPANY, LTD.
BAS20HT1–1/2
• Device Marking: JS
CASE 477, STYLE 1
SOD– 323
1
2
BAS20HT1
2
ANODE
1
CATHODE
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage VR 250 Vdc
Peak Forward Current I F 200 mAdc
Peak Forward Surge Current IFM(surge) 625 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board,* PD 200 mW
TA = 25°C
Derate above 25°C 1.57 mW/°C
Thermal Resistance Junction to Ambient RθJA 635 °C/W
Junction and Storage
TJ, Tstg
–55 to+150 °C
Temperature Range
*FR–5 Minimum Pad
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current I R µAdc
(VR = 200 Vdc) – 1.0
(VR = 200 Vdc, TJ = 150°C) – 100
Reverse Breakdown Voltage V(BR) 250 – Vdc
(IBR = 100 µAdc)
Forward Voltage VF mV
(IF = 100 mAdc) – 1000
(IF = 200 mAdc) – 1250
Diode Capacitance CD – 5.0 pF
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time trr –50ns
(IF = IR = 30 mAdc, RL = 100 Ω)
JS M
MARKING DIAGRAM
JS= Specific Device Code
M = Date Code
ORDERING INFORMATION
Device Package Shipping
BAS20HT1 SOD–323 3000/Tape & Reel
Preferred: devices are recommended choices for future use and best overall value.
Switching Diode
High Voltage