EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BAS19WS

器件描述:SURFACE MOUNT FAST SWITCHING DIODE
器件厂商:WTE [Won-Top Electronics]
厂商主页:http://www.wontop.com/
文件大小:42.95KB,共3页
Sponsor by e络盟
器件资料摘要:
BAS19WS – BAS21WS 1 of 3 © 2002 Won-Top Electronics
BAS19WS – BAS21WS
SURFACE MOUNT FAST SWITCHING DIODE
Features
! High Conductance
! Fast Switching Speed A
! Surface Mount Package Ideally Suited for
Automatic Insertion
! For General Purpose Switching Application C
! Plastic Material – UL Recognition Flammability D
Classification 94V-O B
G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01
E
Mechanical Data
! Case: SOD-323, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.004 grams (approx.)
! Marking: BAS19WS A8 H
BAS20WS A80
BAS21WS A82
Maximum Ratings @T
A
=25°C unless otherwise specified
Characteristic Symbol BAS19WS BAS20WS BAS21WS Unit
Non-Repetitive Peak Reverse Voltage VRM 120 200 250 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100 150 200 V
RMS Reverse Voltage VR(RMS) 70 105 140 V
Forward Continuous Current (Note 1) IF 400 mA
Average Rectified Output Current (Note 1) IO 200 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0µs
@ t = 1.0s
IFSM
2.5
0.5
A
Power Dissipation Pd 200 mW
Typical Thermal Resistance, Junction to Ambient Air (Note 1) RG01JA 625 K/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Electrical Characteristics @T
A
=25°C unless otherwise specified
Characteristic Symbol BAS19WS BAS20WS BAS21WS Unit
Forward Voltage Drop @ IF = 100mA VFM 1.0 V
Peak Reverse Leakage Current @ Rated DC Blocking Voltage IRM 100 nA
Typical Junction Capacitance (VR = 0V DC, f = 1.0MHz) Cj 5.0 pF
Reverse Recovery Time (Note 2) trr 50 nS
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. Measured with IF = IR = 30mA, IRR = 0.1 x IR, RL = 100G01.
WTE
POWER SEMICONDUCTORS
SOD-323
Dim Min Max
A 2.30 2.70
B 1.75 1.95
C 1.15 1.35
D 0.25 0.35
E 0.05 0.15
G 0.70 0.95
H 0.30 —
All Dimensions in mm
G