Aug-06-2001
1
BAS19...BAS21
1
2
3
VPS05161
Silicon Switching Diodes
G01G02High-speed, high-voltage switching applications
13
EHA07002
Type Marking Pin Configuration Package
BAS19
BAS20
BAS21
JPs
JRs
JSs
1 = A
1 = A
1 = A
2 = n.c.
2 = n.c.
2 = n.c.
3 = C
3 = C
3 = C
SOT23
SOT23
SOT23
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage
BAS19
BAS20
BAS21
V
R

100
150
200
V
Peak reverse voltage-
BAS19
BAS20
BAS21
V
RM

120
200
250
Forward current I
F
250 mA
Peak forward current I
FM
625
Total power dissipation
T
S
= 70 °C
P
tot
350 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1)
R
thJS
G01 230
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance