FEATURES
Small Signal Diodes
Dimensions in inches and (millimeters)
.016 (0.4)
.056
(
1
.4
3
)
.037(0.95) .037(0.95)
max
.
.004 (
0
.1)
.122 (3.1)
.016 (0.4) .016 (0.4)
3
12
Top View
.102 (2.6)
.007 (
0
.175)
.045 (
1
.15)
.118 (3.0)
.05
2
(
1
.
3
3
)
.005 (
0
.125)
.094 (2.4)
.037 (
0
.95)

Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C

ambient temperature unless otherwise specified
SOT-23
4/98
Symbol Value Unit
Continuous Reverse Voltage
BAS19
BAS20
BAS21
V
R
V
R
V
R
100
150
200
V
V
V
Repetitive Peak Reverse Voltage
BAS19
BAS20
BAS21
V
RRM
V
RRM
V
RRM
120
200
250
V
V
V
Non-Repetitive Peak Forward Current
at t = 1 µs
at t = 1 s
I
FSM
I
FSM
2.5
0.5
A
A
Average Rectified Forward Current
(averaged over any 20 ms period)
I
F(AV)
200
1)
mA
Forward DC Current at T
amb
= 25 °C I
F
200
2)
mA
Repetitive Peak Forward Current I
FRM
625 mA
Power Dissipation up to T
amb
= 25 °C P
tot
200
2)
mW
Junction Temperature T
j
150 °C
Storage Temperature Range T
S
– 65 to +150 °C
1)
Measured under pulse conditions; Pulse time = tp ≤ 0.3 ms.
2)
Device on fiberglass substrate, see layout.
1
3
2
Top View
BAS19, BAS20, BAS21
Silicon Planar Epitaxial High-Speed
Diodes
For switching and general purpose
applications.
These diodes are also available in other case styles includ-
ing: the SOD-123 case with the type designation BAV19W -
BAV21W, the MiniMELF case with the type designation
BAV101 - BAV103, and the DO-35 case with the type desig-
nation BAV19 - BAV21.
♦
♦
Marking
BAS19 = A8
BAS20 = A81
BAS21 = A82
♦