1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0083C0105C0108C0105C0099C0111C0110 C0083C0119C0105C0116C0099C0104C0105C0110C0103 C0068C0105C0111C0100C0101
MAXIMUM RATINGS (T
A
= 25°C)
Rating Symbol Max Unit
Continuous Reverse Voltage V
R
75 V
Recurrent Peak Forward Current I
R
200 mA
Peak Forward Surge Current
Pulse Width = 10 µs
I
FM(surge)
500 mA
Total Power Dissipation, One Diode Loaded
T
A
= 25°C
Derate above 25°C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
P
D
200
1.6
mW
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
R
θJA
0.625 °C/mW
DEVICE MARKING
A6
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Forward Voltage
(I
F
= 1.0 mA)
(I
F
= 10 mA)
(I
F
= 50 mA)
(I
F
= 150 mA)
V
F
—
—
—
—
715
866
1000
1250
mV
Reverse Current
(V
R
= 75 V)
(V
R
= 75 V, T
J
= 150°C)
(V
R
= 25 V, T
J
= 150°C)
I
R
—
—
—
1.0
50
30
µA
Capacitance
(V
R
= 0, f = 1.0 MHz)
C
D
— 2.0 pF
Reverse Recovery Time
(I
F
= I
R
= 10 mA, R
L
= 50 Ω) (Figure 1)
t
rr
— 6.0 ns
Stored Charge
(I
F
= 10 mA to V
R
= 6.0 V, R
L
= 500 Ω) (Figure 2)
QS — 45 PC
Forward Recovery Voltage
(I
F
= 10 mA, t
r
= 20 ns) (Figure 3)
V
FR
— 1.75 V
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by BAS16WT1/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0065C0083C0049C0054C0087C0084C0049
Motorola Preferred Device
CASE 419–02, STYLE 2
SC–70/SOT–323
1
2
3
 Motorola, Inc. 1997
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