Semiconductor Group 1 Nov-28-1996
BAS 16W
Silicon Switching Diode
• For high speed switching applications
Type Marking Ordering Code Pin Configuration Package
BAS 16W A6s Q62702-A1050 1 = A 3 = C SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage V
R
75 V
Peak reverse voltage V
RM
85
Forward current I
F
250 mA
Surge forward current, t = 1 µs I
FS
4.5
Total Power dissipation
T
S
≤ 119 °C
P
tot
250
mW
Junction temperature T
j
150 °C
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
≤ 260 K/W
Junction - soldering point R
thJS
≤ 125
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm
2
Cu