BAS16TT1
器件描述:Silicon Switching Diode
文件大小:123.65KB,共8页
Sponsor by e络盟
器件资料摘要:
Semiconductor Components Industries, LLC, 2000
March, 2000 – Rev. 0
1 Publication Order Number:
BAS16TT1/D
C0066C0065C0083C0049C0054C0084C0084C0049
Preferred Device
C0065C0100C0118C0097C0110C0099C0101 C0073C0110C0102C0111C0114C0109C0097C0116C0105C0111C0110
C0083C0105C0108C0105C0099C0111C0110 C0083C0119C0105C0116C0099C0104C0105C0110C0103 C0068C0105C0111C0100C0101
MAXIMUM RATINGS (T
A
= 25°C)
Rating Symbol Max Unit
Continuous Reverse Voltage V
R
75 V
Recurrent Peak Forward Current I
F
200 mA
Peak Forward Surge Current
Pulse Width = 10 C0109s
I
FM(surge)
500 mA
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Power Dissipation,
(1)
T
A
= 25°C
P
D
150 mW
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to
+150
°C
Thermal Resistance,
Junction to Ambient
R
θJA
833 °C/W
(1) Device mounted on FR–4 glass epoxy printed circuit board using the
minimum recommended footpad.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
Device Package Shipping
ORDERING INFORMATION
BAS16TT1 SOT–416
http://onsemi.com
CASE 463
SOT–416/SC–75
STYLE 2
3000 / Tape & Reel
DEVICE MARKING
A6
3
2
1
Preferred devices are recommended choices for future use
and best overall value.
3
CATHODE
1
ANODE