BAS 16S
Semiconductor Group
Apr-24-19981
Silicon Switching Diode Array
• For high-speed switching applications
• Internal (galvanic) isolated Diodes
in one package
Tape loading orientation
VPS05604
6
3
1
5
4
2
Type Marking Ordering Code Pin Configuration Package
BAS 16S A6s Q62702-A1241 1=A1 2=A2 3=A3 SOT-3634=C3 5=C2 6=C1
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage V
R
75 V
Peak reverse voltage V
RM
85
Forward current I
F
200 mA
Surge forward current, t = 1 m s I
FS
4.5 A
Total power dissipation, T
S
= 85 °C P
tot
250 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
65 ...+150
Thermal Resistance
Junction - ambient
1)
R
thJA
£ 530 K/W
Junction - soldering point R
thJS
£ 260 K/W
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm
2
Cu
Semiconductor Group 1 1998-11-01