BAS16LT1
器件描述:Switching Diode
文件大小:50.59KB,共2页
Sponsor by e络盟
器件资料摘要:
LESHAN RADIO COMPANY, LTD.
G2–1/2
1
3
2
Switching Diode
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
R
75 Vdc
Peak Forward Current I
F
200 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
DEVICE MARKING
BAS16LT1 = A6
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P
D
225 mW
T
A
= 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
556 °C/W
Total Device Dissipation P
D
300 mW
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current I
R
µAdc
(V
R
= 75Vdc) — 1.0
(V
R
= 75 Vdc, T
J
= 150°C) — 50
(V
R
= 25 Vdc, T
J
= 150°C) — 30
Reverse Breakdown Voltage
V
(BR)
75 — Vdc
(I
BR
= 100 µAdc)
Forward Voltage V
F
mV
(I
F
= 1.0 mAdc) — 715
(I
F
= 10 mAdc) — 855
(I
F
= 50 mAdc) — 1000
(I
F
= 150 mAdc) — 1250
Diode Capacitance
C
D
— 2.0 pF
(V
R
= 0, f = 1.0 MHz)
Forward Recovery Voltage
V
FR
–- 1.75 Vdc
(I
F
= 10 mAdc, t
r
= 20ns )
Reverse Recovery Time
t
rr
— 6.0 ns
(I
F
= I
R
= 10 mAdc, R
L
= 50 Ω)
Stored Charge
Q
S
—45pC
(I
F
= 10 mAdc to V
R
= 5.0Vdc, R
L
= 500 Ω)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BAS16LT1
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
3
CATHODE
1
ANODE