BAS16HT1
SURFACE MOUNT SWITCHING DIODE
Reverse Breakdown Voltage - 75 Volts Peak Forward Current - 200mA
Ratings at 25
o
C ambient temperature unless otherwise specified. SYMBOLS
SYMBOLS
SYMBOLS
Zowie Technology CorporationREV. : 0
SOD-323
*Dimensions in inches and (millimeters)
0.016(0.40)
0.010(0.25)
0.007(0.18)
0.004(0.09)
NOTE 3
0.004(0.10)
0.000(0.00)
0.006(0.150)
CATHODE
Device Marking : BAS16HT1 = A6
ANODE
0.039(1.00)
0.031(0.80)
REF.
0.053(1.35)
0.045(1.15)
0.063(1.60)
0.071(1.80)
0.106(2.70)
0.091(2.30)
1
1
1
2
2
2
0.033(0.83)
0.063(1.60)
0.112(2.85)
0.025(0.63)
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING.
MAXIMUM RATINGS
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
CHARACTERISTIC
Total Device Dissipation FR-5 Board, TA=25
o
C
Derate above 25
o
C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS ( T
A
=25
o
C unless otherwise noted )
Reverse Voltage Leakage Current
Reverse Breakdown Voltage
Forward Voltage
Junction Capacitance
Forward Recovery Voltage
Reverse Recovery Time
Stored Charge
( V
R
=75Vdc )
( V
R
=75Vdc, T
J
=150
o
C )
( V
R
=25Vdc, T
J
=150
o
C )
( I
BR
=100uAdc )
( I
F
=1.0mAdc )
( I
F
=10mAdc )
( I
F
=50mAdc )
( I
F
=150mAdc )
( V
R
=0, f=1.0MHz )
( I
F
=10mAdc, tr=20nS )
( I
F
=I
R=
10mAdc, RL=50 )
( I
F
=10mAdc, to V
R
=5.0Vdc, RL=500 )
V
R
I
F
I
FSM
P
D
R
JA
T
J
, T
STG
I
R
V
( BR )
V
F
C
J
V
FR
t
rr
Q
S
VALUE
75
200
500
UNITS
UNITS
UNITS
Vdc
mAdc
mAdc
MAX.
200
1.57
635
150
mW
mW /
o
C
o
C / W
o
C
MIN. MAX.
-
-
-
1.0
50
30
uAdc
Vdc75 -
-
-
-
-
0.72
0.86
1.00
1.25
Vdc
- 2.0
1.75
6.0
45
-
-
-
pF
Vdc
nS
pC
CHARACTERISTIC