BAS16-03W
器件描述：Silicon Switching Diode Preliminary data (For high-speed switching applications)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：29.59KB，共4页
Sponsor by e络盟器件资料摘要：
BAS 16-03W
Semiconductor Group
Mar-13-19981
Silicon Switching Diode
Preliminary data
• For high-speed switching applications
VPS05176
1
2
Type Marking Pin Configuration PackageOrdering Code
Q62702-A1231B 1 = A 2 = CBAS 16-03W SOD-323
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage V
R
75 V
Peak reverse voltage V
RM
85
Forward current I
F
250 mA
Surge forward current, t = 1 m s I
FS
4.5 A
Total power dissipation, T
S
= 111 °C P
tot
250 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
- 65 ...+150
Thermal Resistance
Junction - ambient
1)
R
thJA
£ 235 K/W
Junction - soldering point R
thJS
£ 155
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group 1 1998-11-01
Semiconductor Group
Mar-13-19981
Silicon Switching Diode
Preliminary data
• For high-speed switching applications
VPS05176
1
2
Type Marking Pin Configuration PackageOrdering Code
Q62702-A1231B 1 = A 2 = CBAS 16-03W SOD-323
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage V
R
75 V
Peak reverse voltage V
RM
85
Forward current I
F
250 mA
Surge forward current, t = 1 m s I
FS
4.5 A
Total power dissipation, T
S
= 111 °C P
tot
250 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
- 65 ...+150
Thermal Resistance
Junction - ambient
1)
R
thJA
£ 235 K/W
Junction - soldering point R
thJS
£ 155
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group 1 1998-11-01