BAS125-07W
器件描述：Silicon Schottky Diode (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：33.03KB，共4页
Sponsor by e络盟器件资料摘要：
BAS 125-07W
Semiconductor Group
Jun-04-19981
Silicon Schottky Diode
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BAS 125-07W 17s Q62702-D1347 1 = C1 2 = C2 SOT-3433 = A2 4 = A1
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage V
R
25 V
Forward current I
F
100 mA
Surge forward current (t< 100m s) I
FSM
500
Total power dissipation, T
S
= 25 °C P
tot
250 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
- 55 ...+150
Maximum Ratings
Junction - ambient
1)
R
thJA
£ 725 K/W
Junction - soldering point R
thJS
£ 565
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm
2
Cu
Semiconductor Group 1 1998-11-01
Semiconductor Group
Jun-04-19981
Silicon Schottky Diode
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BAS 125-07W 17s Q62702-D1347 1 = C1 2 = C2 SOT-3433 = A2 4 = A1
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage V
R
25 V
Forward current I
F
100 mA
Surge forward current (t< 100m s) I
FSM
500
Total power dissipation, T
S
= 25 °C P
tot
250 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
- 55 ...+150
Maximum Ratings
Junction - ambient
1)
R
thJA
£ 725 K/W
Junction - soldering point R
thJS
£ 565
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm
2
Cu
Semiconductor Group 1 1998-11-01