BAS125W
Nov-15-20011
Silicon Schottky Diodes
G01 For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
G01 Integrated diffused guard ring
G01 Low forward voltage
1
3
VSO05561
2
BAS125W BAS125-05W
BAS125-06WBAS125-04W
EHA07004
1
3
2
EHA07005
1
3
2
EHA07006
1
3
2
13
EHA07002
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BAS125W
BAS125-04W
BAS125-05W
BAS125-06W
13s
14s
15s
16s
1 = A
1 = A1
1 = A1
1 = C1
2 n.c.
2 = C2
2 = A2
2 = C2
3 = C
3 = C1/A2
3 = C1/2
3 = A1/2
SOT323
SOT323
SOT323
SOT323
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage V
R
25 V
Forward current I
F
100 mA
Surge forward current (tG01 100G02s)
I
FSM
500
Total power dissipation BAS125W, T
S
= 93 °C P
tot
250 mW
BAS 125-04W...06W , T
S
= 84 °C P
tot
250
Junction temperature T
j
150 °C
Operating temperature range T
op
-55 ... 150
Storage temperature T
stg
-55 ... 150
Thermal Resistance
Junction - soldering point
1)

BAS125W
BAS125-04W...06W
R
thJS

G01 230
G01 265
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance