Semiconductor Group 1 Dec-20-1996
BAS 125W
Preliminary data
Silicon Schottky Diodes
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
• Integrated diffused guard ring
• Low forward voltage
BAS 125-04W BAS 125-04W BAS 125-06W
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type Marking Ordering Code Pin Configuration Package
BAS 125-04W 14s Q62702- 1 = A1 2 = C2 3=C1/A2 SOT-323
BAS 125-05W 15s Q62702- 1 = A1 2 = A2 3=C1/C2 SOT-323
BAS 125-06W 16s Q62702- 1 = C1 2 = C2 3=A1/A2 SOT-323
BAS 125W 13s Q62702- 1 = A 3 = C SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage V
R
25 V
Forward current I
F
100 mA
Surge forward current (t ≤ 10ms) I
FSM
500
Total Power dissipation
T
S
≤ 25 °C
P
tot
250
mW
Junction temperature T
j
150 °C
Storage temperature T
stg
- 55 ... + 150
Thermal Resistance
Junction ambient, BAS125W 1) R
thJA
≤ 310 K/W
Junction ambient, BAS 125-04W...06W 1) R
thJA
≤ 425
Junction - soldering point, BAS125W R
thJS
≤ 230
Junction - soldering point, BAS125-04W...06W R
thJS
≤ 265
1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm