BAS116LT1
器件描述:Switching Diode
文件大小:37.69KB,共2页
Sponsor by e络盟
器件资料摘要:
LESHAN RADIO COMPANY, LTD.
G4–1/2
1
3
2
Switching Diode
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
R
75 Vdc
Peak Forward Current I
F
200 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
DEVICE MARKING
BAS116LT1 = JV
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P
D
225 mW
T
A
= 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
556 °C/W
Total Device Dissipation P
D
300 mW
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current (V
R
= 75 Vdc ) I
R
–– 5.0 nAdc
(V
R
= 75 Vdc , T
J
=150°C) –– 80
Reverse Breakdown Voltage
V
(BR)
75 — Vdc
(I
BR
= 100 µAdc)
Forward Voltage (I
F
= 1.0 mAdc) V
F
–– 900 mV
(I
F
= 10 mAdc) — 1000
(I
F
= 50 mAdc) –– 1100
(I
F
= 150 mAdc) — 1250
Diode Capacitance(V
R
= 0, f = 1.0 MHz) C
D
— 2.0 pF
Reverse Recovery Time
t
rr
— 3.0 µs
(I
F
= I
R
= 10mAdc, )( Figure 1)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BAS116LT1
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
This switching diode has the following features:
Low Leakage Current Applications
Medium Speed Switching Times
Available in 8 mm Tape and Reel
Use BAS116LT1 to order the 7 inch/3,000 unit reel
Use BAS116LT3 to order the 13 inch/10,000 unit reel
3
CATHODE
1
ANODE