Mar-10-2004
1
BAS116...
Silicon Low Leakage Diode
• Low-leakage applications
• Medium speed switching times
BAS116
G33
G31 G32
Type Package Configuration Marking
BAS116 SOT23 single JVs
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
R
80 V
Peak reverse voltage V
RM
85
Forward current I
F
250 mA
Non-repetitive peak surge forward current
t = 1 µs
t = 1 s
I
FSM

4.5
0.5
A
Total power dissipation
T
S
≤ 54°C
P
tot
370 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1)

BAS116
R
thJS
≤ 260
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance