EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BAS116LT1

器件描述:Switching Diode
器件厂商:ONSEMI [ON Semiconductor]
厂商主页:http://www.onsemi.com
文件大小:63.43KB,共4页
Sponsor by e络盟
器件资料摘要:
1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0083C0119C0105C0116C0099C0104C0105C0110C0103 C0068C0105C0111C0100C0101
This switching diode has the following features:
• Low Leakage Current Applications
• Medium Speed Switching Times
• Available in 8 mm Tape and Reel
Use BAS116LT1 to order the 7 inch/3,000 unit reel
Use BAS116LT3 to order the 13 inch/10,000 unit reel
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
R
75 Vdc
Peak Forward Current I
F
200 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient R
C0113JA
556 °C/W
Total Device Dissipation
Alumina Substrate
(2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient R
C0113JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
BAS116LT1 = JV
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
BR
= 100 µAdc) V
(BR)
75 — Vdc
Reverse Voltage Leakage Current (V
R
= 75 Vdc)
Reverse Voltage Leakage Current (V
R
= 75 Vdc, T
J
= 150°C)
I
R


5.0
80
nAdc
Forward Voltage (I
F
= 1.0 mAdc)
Forward Voltage (I
F
= 10 mAdc)
Forward Voltage (I
F
= 50 mAdc)
Forward Voltage (I
F
= 150 mAdc)
V
F




900
1000
1100
1250
mV
Diode Capacitance (V
R
= 0 V, f = 1.0 MHz) C
D
— 2.0 pF
Reverse Recovery Time (I
F
= I
R
= 10 mAdc) (Figure 1) t
rr
— 3.0 µs
1. FR–5 = 1.0 C0002 0.75 C0002 0.062 in.
2. Alumina = 0.4 C0002 0.3 C0002 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by BAS116LT1/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0065C0083C0049C0049C0054C0076C0084C0049
Motorola Preferred Device
1
2
3
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
 Motorola, Inc. 1997
3
CATHODE
1
ANODE
REV 1