BAS116
器件描述：Silicon Low Leakage Diode (Low-leakage applications Medium speed switching times Single diode)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：98.53KB，共4页
Sponsor by e络盟器件资料摘要：
Semiconductor Group 1
Silicon Low Leakage Diode BAS 116
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking Package
1)
Pin Configuration
BAS 116 Q62702-A919JVs SOT-23
Parameter Symbol Values Unit
Reverse voltage VR 75 V
Forward current IF 250 mA
Junction temperature Tj 150 ˚C
Total power dissipation, TS =54˚C Ptot 370 mW
Storage temperature range Tstg – 65 … + 150
Peak reverse voltage VRM 85
Surge forward current, t = 1 µs IFS 4.5 A
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 330 K/W
Junction - soldering point Rth JS ≤ 260
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm
2
Cu.
a71 Low-leakage applications
a71 Medium speed switching times
a71 Single diode
5.91
Silicon Low Leakage Diode BAS 116
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking Package
1)
Pin Configuration
BAS 116 Q62702-A919JVs SOT-23
Parameter Symbol Values Unit
Reverse voltage VR 75 V
Forward current IF 250 mA
Junction temperature Tj 150 ˚C
Total power dissipation, TS =54˚C Ptot 370 mW
Storage temperature range Tstg – 65 … + 150
Peak reverse voltage VRM 85
Surge forward current, t = 1 µs IFS 4.5 A
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 330 K/W
Junction - soldering point Rth JS ≤ 260
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm
2
Cu.
a71 Low-leakage applications
a71 Medium speed switching times
a71 Single diode
5.91