Dec-20-2002
1
BAR81...
Silicon RF Switching Diode
G01 Designed for use in shunt configuration in
high performance RF switches
G01 High shunt signal isolation
G01 Low shunt insertion loss
G01 Optimized for short - open transformation
using G02G03G04 lines
BAR81W
G32G31
G34 G33
Type Package Configuration L
S
(nH) Marking
BAR81W SOT343 single shunt-diode 0.15* BBs
* series inductance chip to ground
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
R
30 V
Forward current I
F
100 mA
Total power dissipation
T
s
G01 138°C
P
tot
100 mW
Junction temperature T
j
150 °C
Operating temperature range T
op
-55 ... 125
Storage temperature T
stg
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1)
R
thJS
G01 120
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance