BAR 81W
Semiconductor Group
Sep-04-19981
Silicon RF Switching Diode
Preliminary data
• Design for use in shunt configuration
• High shunt signal isolation
• Low shunt insertion loss
VPS05605
4
2
1
3
Type Marking Ordering Code PackagePin Configuration
Q62702-A1270 4 = C13 = A2BAR 81W 1 = A1 2 = C2 SOT-343BBs
Maximum Ratings
Symbol Value UnitParameter
Diode reverse voltage
V
R
V30
I
F
100 mAForward current
mW100
Total power dissipation, T
S
= 138 °C P
tot
Junction temperature
T
j
°C150
Operating temperature range -55 ...+125 °C
T
op
T
stg
Storage temperature -55 ...+150
Thermal Resistance
Junction - ambient
1)
£ 200R
thJA
K/W
£ 120
Junction - soldering point
R
thJS
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group 1 1998-11-01