BAR81
器件描述：Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：46.08KB，共3页
Sponsor by e络盟器件资料摘要：
Semiconductor Group 1 Feb-26-1996
BAR 81
Preliminary data
Silicon RF Switching Diode
• Design for use in shunt configuration
• High shunt signal isolation
• Low shunt insertion loss
Type Marking Ordering Code Pin Configuration Package
BAR 81 BBs Q62702- 1 = C 2 = A 3 = C 4 = A MW-4
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage V
R
30 V
Forward current I
F
100 mA
Operating temperature range T
op
- 55 ... + 125 °C
Storage temperature T
stg
- 55 ... + 150
Q62702-A1145
BAR 81
Preliminary data
Silicon RF Switching Diode
• Design for use in shunt configuration
• High shunt signal isolation
• Low shunt insertion loss
Type Marking Ordering Code Pin Configuration Package
BAR 81 BBs Q62702- 1 = C 2 = A 3 = C 4 = A MW-4
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage V
R
30 V
Forward current I
F
100 mA
Operating temperature range T
op
- 55 ... + 125 °C
Storage temperature T
stg
- 55 ... + 150
Q62702-A1145