BAR80
器件描述：Silicon RF Switching Diode
器件厂商：INFINEON [Infineon Technologies AG]
文件大小：42.16KB，共4页
Sponsor by e络盟器件资料摘要：
BAR80
Aug-17-20011
Silicon RF Switching Diode
G01 Design for use in shunt configuration
G01 High shunt signal isolation
G01 Low shunt insertion loss
4
3
1
2
VSO05553
Type Marking Pin Configuration Package
BAR80 AAs 1 = C 2 = A 3 = C 4 = A
MW-4
Maximum Ratings
Symbol Value UnitParameter
Diode reverse voltage V
V
R
35
I
F
100 mAForward current
Junction temperature 150 °C
T
j
Operating temperature range
T
op
-55 ... 125
Storage temperature
T
stg
-55 ... 150
Aug-17-20011
Silicon RF Switching Diode
G01 Design for use in shunt configuration
G01 High shunt signal isolation
G01 Low shunt insertion loss
4
3
1
2
VSO05553
Type Marking Pin Configuration Package
BAR80 AAs 1 = C 2 = A 3 = C 4 = A
MW-4
Maximum Ratings
Symbol Value UnitParameter
Diode reverse voltage V
V
R
35
I
F
100 mAForward current
Junction temperature 150 °C
T
j
Operating temperature range
T
op
-55 ... 125
Storage temperature
T
stg
-55 ... 150