BAR80
器件描述：Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：68.04KB，共4页
Sponsor by e络盟器件资料摘要：
BAR 80
Semiconductor Group 1 Edition A02, 27.02.95
Type Marking Ordering code
(tape and reel)
Pin configuration
1 2 3 4
Package
1)
BAR 80 AAs Q62702-A1084 C A C A MW-4
Maximum ratings
Parameter Symbol BAR 80 Unit
Reverse voltage VR 35 V
Forward current IF 100 mA
Operating temperature range Top -55...+125 °C
Storage temperature range T
stg
-55...+150 °C
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Silicon RF Switching Diode
G6c Design for use in shunt configuration
G6c Hight shunt signal isolation
G6c Low shunt insertion loss
Semiconductor Group 1 Edition A02, 27.02.95
Type Marking Ordering code
(tape and reel)
Pin configuration
1 2 3 4
Package
1)
BAR 80 AAs Q62702-A1084 C A C A MW-4
Maximum ratings
Parameter Symbol BAR 80 Unit
Reverse voltage VR 35 V
Forward current IF 100 mA
Operating temperature range Top -55...+125 °C
Storage temperature range T
stg
-55...+150 °C
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Silicon RF Switching Diode
G6c Design for use in shunt configuration
G6c Hight shunt signal isolation
G6c Low shunt insertion loss