Feb-04-2003
1
BAR67...
Silicon PIN Diode
G01 For low loss RF switches and attenuators
G01 Very low capacitance at zero volt reverse
bias at frequencies above 1 GHz (typ. 0.25 pF)
G01 Low forward resistance (typ. 1.5 G02 @ 5mA)
G01 Low harmonics
BAR67-02V
G31 G32
Type Package Configuration L
S
(nH) Marking
BAR67-02V SC79 single 0.6 T
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
R
150 V
Forward current I
F
200 mA
Total power dissipation
T
S
G01 118°C
P
tot
250 mW
Junction temperature T
j
150 °C
Operating temperature range T
op
-55 ... 125
Storage temperature T
stg
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1)
, BAR67-02V R
thJS
G01 115
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance