BAR 63 ... W
Semiconductor Group
Sep-07-19981
Silicon PIN Diode
• PIN diode for high speed
switching of RF signal
• Low forward resistance
• Very low capacitance
• For frequencies up to 3 GHz
1
3
VSO05561
2
BAR 63-04W BAR 63-05W
BAR 63-06W
Marking Ordering Code Pin Configuration PackageType
3=C1/A2
3 = C1/2
3 = A1/2
SOT-3232 = C2
2 = A2
2 = C2
BAR 63-04W
BAR 63-05W
BAR 63-06W
Q62702-A1261
Q62702-A1267
Q62702-A1268
1 = A1
1 = A1
1 = C1
G4s
G5s
G6s
Maximum Ratings
UnitParameter Symbol Value
Diode reverse voltage
V
R
V50
100 mA
I
F
Forward current
Total power dissipation, T
S
£ 105 °C P
tot
mW250
150Junction temperature
T
j
°C
T
op
Operating temperature range - 55 ...+150
Storage temperature
T
stg
- 55 ...+150
Thermal Resistance
K/W
R
thJA
£ 340
Junction - ambient
1)
Junction - soldering point
R
thJS
£ 180
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group 1 1998-11-01