BAR63
器件描述:Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
文件大小:80.63KB,共4页
Sponsor by e络盟
器件资料摘要:
BAR 63...
Semiconductor Group 1 Edition A01, 23.02.95
Type Marking Ordering code
(tape and reel)
Pin configuration
1 2 3
Package
1)
BAR 63 G3 Q62702-A1036 A - C SOT-23
BAR 63-04 G4 Q62702-A1037 A C C/A
BAR 63-05 G5 Q62702-A1038 A A C/C
BAR 63-06 G6 Q62702-A1039 C C A/A
Maximum ratings
Parameter Symbol BAR 63 Unit
Reverse voltage VR 50 V
Forward current I
F
100 mA
Total Power dissipation T
S
≤ 80°C
BAR 63-04,-05,-06 T
S
≤ 55°C
P
tot
250
250
mW
Operating temperature range T
op
-55 +150°C °C
Storage temperature range T
stg
-55...+150°C °C
Thermal resistance
Junction-ambient
1)
BAR63
BAR 63-04,-05,-06
R
th JA
≤ 450
≤ 540
K/W
Junction-soldering point
BAR64
BAR63-04,-05,-06
R
th JS
≤ 280
≤ 380
_________________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
Silicon PIN Diode
G6c PIN diode for high speed switching of RF signals
G6c Low forward resistance
G6c Very low capacitance
G6c For frequencies up to 3 GHz