Dec-20-2002
1
BAR14-1 / BAR15-1 / BAR16-1 / BAR61...
Silicon PIN Diode
G01 RF switch, RF attenuator for frequencies
above 10 MHz
G01 Low distortion faktor
G01 Long-term stability of electrical characteristics
BAR14-1 BAR15-1 BAR61BAR16-1
G33
G31
G44G32
G32
G44G31
G32G31
G34 G33
G44G31
G44G32
G44G33
G33
G31
G44G32
G32
G44G31
G33
G31
G44G32
G32
G44G31
Type Package Configuration L
S
(nH) Marking
BAR14-1
BAR15-1
BAR16-1
BAR61
SOT23
SOT23
SOT23
SOT143
series
common cathode
common anode
PI element
1.8
1.8
1.8
2
L7s
L8s
L9s
61s
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
R
100 V
Forward current I
F
140 mA
Total power dissipation
T
S
G01 65°C
P
tot
250 mW
Junction temperature T
j
150 °C
Operating temperature range T
op
-55 ... 125
Storage temperature T
stg
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1)
R
thJS
G01 340
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance