BAQ33...BAQ35
Vishay Telefunken
Rev. 2, 01-Apr-99 1 (3)
www.vishay.de • FaxBack +1-408-970-5600Document Number 85537
Silicon Planar Diodes
Features
C0068 Very low reverse current
Applications
Protection circuits, time delay circuits, peak follower
circuits, logarithmic amplifiers
94 9371
Absolute Maximum Ratings
T
j
= 25C0095C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage BAQ33 V
R
30 Vg
BAQ34 V
R
60 V
BAQ35 V
R
125 V
Peak forward surge current t
p
=1C0109s I
FSM
2 A
Forward current I
F
200 mA
Junction temperature T
j
200 C0176C
Storage temperature range T
stg
–65...+200 C0176C
Maximum Thermal Resistance
T
j
= 25C0095C
Parameter Test Conditions Symbol Value Unit
Junction ambient on PC board 50mmx50mmx1.6mm R
thJA
500 K/W
Electrical Characteristics
T
j
= 25C0095C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage I
F
=100mA V
F
1 V
Reverse current EC0120300lx, V
R
I
R
1 3 nA
EC0120300lx, V
R
, T
j
=125C0176C I
R
0.5 C0109A
EC0120300lx, V
R
=15V BAQ33 I
R
0.5 1 nA
EC0120300lx, V
R
=30V BAQ34 I
R
0.5 1 nA
EC0120300lx, V
R
=60V BAQ35 I
R
0.5 1 nA
Breakdown voltage I
R
=5C0109A, t
p
/T=0.01, t
p
=0.3ms BAQ33 V
(BR)
40 Vg
BAQ34 V
(BR)
70 V
BAQ35 V
(BR)
140 V
Diode capacitance V
R
=0, f=1MHz C
D
3 pF