LESHAN RADIO COMPANY, LTD.
S27–1/2
FEATURES
· High voltage, current controlled
· RF resistor for RF switches
· Low diode capacitance
· Low diode forward resistance (low loss)
· Very low series inductance.
APPLICATIONS
· RF attenuators and switches
· Bandswitch for TV tuners
· Series diode for mobile communication transmit/receive switch.
DESCRIPTION
Planar PIN diode in a SOD523 ultra small SMD plastic package.
Silicon PIN diode
SOD523 SC-79
1
2
BAP65 – 02
2
ANODE
1
CATHODE
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V R continuous reverse voltage – 30 V
II
F
continuous forward current – 100 mA
P tot total power dissipation T s < 90°C – 715 mW
T
stg
storage temperature -65 +150 °C
T j junction temperature -65 +150 °C
ELECTRICAL CHARACTERISTICS T
j
= 25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
forward voltage I
F
=50 mA 0.9 1.1 V
I R reverse current V R =20 V – 20 nA
C
d
diode capacitance V
R
= 0; f = 1 MHz 0.65 – pF
V R = 1 V; f = 1 MHz 0.55 0.9 pF
V
R
= 3 V; f = 1 MHz 0.5 0.8 pF
V R = 20 V; f = 1 MHz 0.375 – pF
r
D
diode forward resistance I
F
= 1 mA; f = 100 MHz; 1 – Ω
I F = 5 mA; f = 100 MHz; note 1 0.65 0.95 Ω
I
F
= 10 mA; f = 100 MHz; note 1 0.56 0.9 Ω
I F = 100 mA; f = 100 MHz; 0.35 – Ω
|s
21
|
2
isolation V
R
= 0; f = 900 MHz 10 – dB
V R = 0; f = 1800 MHz 5.8 – dB
V
R
= 0; f = 2450 MHz 4.4 – dB
|s 21|
2
insertion loss I F = 1 mA; f = 900 MHz 0.11 – dB
I
F
= 1 mA; f = 1800 MHz 0.13 – dB
I F = 1 mA; f = 2450 MHz 0.16 – dB
|s
21
|
2
insertion loss I
F
= 5 mA; f = 900 MHz 0.08 – dB
I F = 5 mA; f = 1800 MHz 0.11 – dB
I
F
= 5 mA; f = 2450 MHz 0.13 – dB
|s 21|
2
insertion loss I F = 10 mA; f = 900 MHz 0.07 – dB
I
F
= 10 mA; f = 1800 MHz 0.1 – dB
I F = 10 mA; f = 2450 MHz 0.13 – dB
|s
21
|
2
insertion loss I
F
= 100 mA; f = 900 MHz 0.07 – dB
I F = 100 mA; f = 1800 MHz 0.1 – dB
I
F
= 100 mA; f = 2450 MHz 0.128 – dB