LESHAN RADIO COMPANY, LTD.
S26–1/2
Silicon PIN diode
SOD523 SC-79
1
2
BAP64 – 02
2
ANODE
1
CATHODE
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V R continuous reverse voltage – 175 V
II
F
continuous forward current – 100 mA
P tot total power dissipation T s =90°C – 715 mW
T
stg
storage temperature -65 +150 °C
T j junction temperature -65 +150 °C
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V F forward voltage I F =50 mA 0.95 1.1 V
I
R
reverse current V
R
=175V – 10 µA
V R =20V – 1 µA
C
d
diode capacitance V
R
= 0; f = 1 MHz 0.48 – pF
V R = 1 V; f = 1 MHz 0.35 – pF
V
R
= 20 V; f = 1 MHz 0.23 0.35 pF
r D diode forward resistance I F = 0.5 mA; f = 100 MHz; note 1 20 40 Ω
I
F
= 1 mA; f = 100 MHz; note 1 10 20 Ω
I F = 10 mA; f = 100 MHz; note 1 2 3.8 Ω
I
F
= 100 mA; f = 100 MHz; note 1 0.7 1.35 Ω
τ L charge carrier life time when switched from I F =10 mA to 1.55 – µs
I
R
= 6 mA; R
L
= 100 Ω;
measured at I R =3 mA
L
S
series inductance 0.6 – nH
Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering-point 85 K/W
FEATURES
· High voltage, current controlled
· RF resistor for RF attenuators and switches
· Low diode capacitance
· Low diode forward resistance
· Very low series inductance
· For applications up to 3 GHz.
APPLICATIONS
· RF attenuators and switches.
DESCRIPTION
Planar PIN diode in a SOD523 ultra small plastic SMD package.