1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0083C0119C0105C0116C0099C0104C0105C0110C0103 C0068C0105C0111C0100C0101
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
R
70 Vdc
Peak Forward Current I
F
100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient R
C0113JA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient R
C0113JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
BAL99LT1 = JF
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V
R
= 70 Vdc)
(V
R
= 25 Vdc, T
J
= 150°C)
(V
R
= 70 Vdc, T
J
= 150°C)
I
R
—
—
—
2.5
30
50
µAdc
Reverse Breakdown Voltage
(I
R
= 100 µAdc)
V
(BR)
70 — Vdc
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
V
F
—
—
—
—
715
855
1000
1250
mV
Recovery Current
(I
F
= 10 mAdc, V
R
= 5.0 Vdc, R
L
= 500 Ω)
Q
S
— 45 pC
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
C
D
— 1.5 pF
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, R
L
= 100 Ω, measured at I
R
= 1.0 mAdc)
t
rr
— 6.0 ns
Forward Recovery Voltage
(I
F
= 10 mAdc, t
r
= 20 ns)
V
FR
— 1.75 Vdc
1. FR–5 = 1.0 C0002 0.75 C0002 0.062 in.
2. Alumina = 0.4 C0002 0.3 C0002 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Order this document
by BAL99LT1/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0065C0076C0057C0057C0076C0084C0049
1
2
3
CASE 318–08, STYLE 18
SOT–23 (TO–236AB)
 Motorola, Inc. 1997
ANODE
3
CATHODE
2