Transistors
1
2SD2620J
Silicon NPN epitaxial planer type
For low-frequency amplification
a73 Features
• High forward current transfer ratio h
FE
• Low collector to emitter saturation voltage V
CE(sat)
• High emitter to base voltage V
BEO
• SS-mini type package
a73 Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
CBO
V
CB
= 60 V, I
E
= 0 0.1 µA
I
CEO
V
CE
= 60 V, I
B
= 0 1.0 µA
Collector to base voltage V
CBO
I
C
= 10 µA, I
E
= 0 100 V
Collector to emitter voltage V
CEO
I
C
= 1 mA, I
B
= 0 100 V
Emitter to base voltage V
EBO
I
E
= 10 µA, I
C
= 015
Forward current transfer ratio h
FE
V
CE
= 10 V, I
C
= 2 mA 400 1 200
Collector to emitter saturation voltage V
CE(sat)
I
C
= 10 mA, I
B
= 1 mA 0.05 0.2 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −2 mA, f = 200 MHz 200 MHz
Noise voltage NV V
CE
= 10 V, I
C
= 1 mA, GB = 80 dB 80 mV
R
g
= 100 kΩ, Function = FLAT
a73 Electrical Characteristics T
a
= 25°C ± 3°C
Marking Symbol: 3B
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
100 V
Collector to emitter voltage V
CEO
100 V
Emitter to base voltage V
EBO
15 V
Peak collector current I
CP
50 mA
Collector current I
C
20 mA
Collector power dissipation P
C
125 mW
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
0.27±0.02
3
12
0.12
+0.03
–0.01
0.80
±0.05
(0.80)
0.85
1.60
±0.05
0 to 0.02
0.10 max.
0.70
+0.05 –0.03
(0.375)
5
°
5°
1.60
+0.05
–0.03
1.00±0.05
(0.50)(0.50)
+0.05 –0.03
1: Base
2: Emitter EIAJ: SC-81
3: Collector SS-Mini Type Package