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BA892
EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn 器件描述：Band-switching diode 器件厂商：LRC [Leshan Radio Company] 厂商主页：http://www.lrc-china.com/ 文件大小：91.7KB 文件页数：2 PDF阅读：BA892.pdf (点击阅读器件资料) 摘要： LESHAN RADIO COMPANY, LTD. S22–1/2 Band-switching diode SOD523 SC-79 1 2 BA 892 2 ANODE 1 CATHODE FEATURES · Small plastic SMD package · Low diode capacitance · Low diode forward resistance · Small inductance. APPLICATIONS · Low loss band-switching in VHF television tuners · Surface mount band-switching circuits. DESCRIPTION Planar, high performance band-switch diode in a small SMD plastic package (SOD523). LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V R continuous reverse voltage – 35 V II F continuous forward current – 100 mA P tot total power dissipation T s =90°C – 715 mW T stg storage temperature -65 +150 °C T j junction temperature -65 +150 °C ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP. MAX. UNIT V F forward voltage I F =10 mA – – 1 V I R reverse current V R =30 V – – 20 nA C d diode capacitance f = 1 MHz; note 1; V R = 1 V – 0.92 1.4 pF V R = 3 V 0.6 0.85 1.1 pF r D diode forward resistance f = 100 MHz; note 1; I F = 3 mA – 0.45 0.7 ? I F = 10 mA – 0.36 0.5 ? L S series inductance – 0.6 - nH Note 1. Guaranteed on AQL basis; inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering-point 85 K/W 相关器件：

BA892

EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn

器件描述：Band-switching diode
器件厂商：LRC [Leshan Radio Company]
厂商主页：http://www.lrc-china.com/
文件大小：91.7KB
文件页数：2
PDF阅读：BA892.pdf (点击阅读器件资料)

摘要：
LESHAN RADIO COMPANY, LTD.
S22–1/2
Band-switching diode
SOD523 SC-79
1
2
BA 892
2
ANODE
1
CATHODE
FEATURES
· Small plastic SMD package
· Low diode capacitance
· Low diode forward resistance
· Small inductance.
APPLICATIONS
· Low loss band-switching in VHF television tuners
· Surface mount band-switching circuits.
DESCRIPTION
Planar, high performance band-switch diode in a small SMD plastic
package (SOD523).
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V R continuous reverse voltage – 35 V
II
F
continuous forward current – 100 mA
P tot total power dissipation T s =90°C – 715 mW
T
stg
storage temperature -65 +150 °C
T j junction temperature -65 +150 °C
ELECTRICAL CHARACTERISTICS T
j
= 25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX. UNIT
V
F
forward voltage I
F
=10 mA – – 1 V
I R reverse current V R =30 V – – 20 nA
C
d
diode capacitance f = 1 MHz; note 1;
V R = 1 V – 0.92 1.4 pF
V
R
= 3 V 0.6 0.85 1.1 pF
r D diode forward resistance f = 100 MHz; note 1;
I
F
= 3 mA – 0.45 0.7 ?
I F = 10 mA – 0.36 0.5 ?
L
S
series inductance – 0.6 - nH
Note
1. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering-point 85 K/W

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