Transistors
1
2SB1320A
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD1991A
a73 Features
• High forward current transfer ratio h
FE
• Allowing supply with the radial taping
a73 Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
−60 V
Collector to emitter voltage V
CEO
−50 V
Emitter to base voltage V
EBO
−7V
Peak collector current I
CP
−200 mA
Collector current I
C
−100 mA
Collector power dissipation P
C
400 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
CBO
V
CB
= −20 V, I
E
= 0 −1 µA
I
CEO
V
CE
= −20 V, I
B
= 0 −1 µA
Collector to base voltage V
CBO
I
C
= −10 µA, I
E
= 0 −60 V
Collector to emitter voltage V
CEO
I
C
= −2 mA, I
B
= 0 −50 V
Emitter to base voltage V
EBO
I
E
= −10 µA, I
C
= 0 −7V
Forward current transfer ratio
*
h
FE
V
CE
= −10 V, I
C
= −2 mA 160 460
Collector to emitter saturation voltage V
CE(sat)
I
C
= −100 mA, I
B
= −10 mA −1V
Transition frequency f
T
V
CB
= −10 V, I
E
= 1 mA, f = 200 MHz 80 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 3.5 pF
a73 Electrical Characteristics T
a
= 25°C ± 3°C
Note)
*
: Rank classification
Unit: mm
6.9±0.1 1.05
±0.05
2.5±0.1
3.5
±
0.1
14.5
±
0.5
(1.45)
0.8
0.7 4.0
0.15
0.85
0.8
1.0
0.65 max.
0.45
+0.1
−0.05
0.45
+
0.1
−
0.05
2.5±0.5 2.5±0.5
2.5
±
0.1
123
1.2±0.1
0.65
max.
0.45
0.1
0.05
+
−
(HW Type)
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT1 Type Package
Rank Q R S No-rank
h
FE
160 to 260 210 to 340 290 to 460 160 to 460
Product of no-rank is not classified and have no indication for rank.