BA479G.BA479S
Vishay Telefunken
Rev. 2, 01-Apr-99 1 (3)
www.vishay.de • FaxBack +1-408-970-5600Document Number 85527
Silicon PIN Diodes
Features
C0068 Wide frequency range 10 MHz to 1 GHz
Applications
Current controlled HF resistance in adjustable
attenuators
94 9367
Absolute Maximum Ratings
T
j
= 25C0095C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage V
R
30 V
Forward current I
F
50 mA
Junction temperature T
j
125 C0176C
Storage temperature range T
stg
–55...+125 C0176C
Maximum Thermal Resistance
T
j
= 25C0095C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=4mm, T
L
=constant R
thJA
350 K/W
Electrical Characteristics
T
j
= 25C0095C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage I
F
=20mA V
F
1 V
Reverse current V
R
=30 V I
R
50 nA
Diode capacitance f=100MHz, V
R
=0 C
D
0.5 pF
Differential forward
resistance
f=100MHz, I
F
=1.5mA r
f
50 C0087
Reverse impedance f=100MHz, V
R
=0 BA479G z
r
5 kC0087
BA479S z
r
9 kC0087
Minority carrier
lifetime
I
F
=10mA, I
R
=10mA C0116 4 C0109s