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BA157

器件描述:FAST RECOVERY RECTIFIER DIODES
器件厂商:EIC [EIC discrete Semiconductors]
厂商主页:http://www.eicsemi.com
文件大小:47.11KB,共2页
Sponsor by e络盟
器件资料摘要:
BA157 - BA159 FAST RECOVERY
RECTIFIER DIODES
PRV : 400 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL BA157 BA158 BA159 UNIT
Maximum Recurrent Peak Reverse Voltage VRRM 400 600 1000 V
Maximum RMS Voltage VRMS 280 420 700 V
Maximum DC Blocking Voltage VDC 400 600 1000 V
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 45 °C
Peak Forward Surge Current,
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 1.0 Amp. VF 1.3 V
Maximum DC Reverse Current Ta = 25 °C IR 5.0 µA
at Rated DC Blocking Voltage Ta = 100 °C IR(H) 100 µA
Maximum Reverse Recovery Time ( Note 1 ) Trr 150 250 ns
Typical Junction Capacitance ( Note 2 ) CJ 20 pf
Junction Temperature Range TJ - 65 to + 150 °C
Storage Temperature Range TSTG - 65 to + 150 °C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2 Rev. 01 : Apr. 2, 2002
A
A
RATING
IFSM
IF(AV) 1.0
35
DO - 41
Dimensions in inches and ( millimeters )
1.00 (25.4)
MIN.0.107 (2.7)
0.080 (2.0)
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.0.034 (0.86)0.028 (0.71)