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BA157

器件描述:1.0A FAST RECOVERY RECTIFIER
器件厂商:WTE [Won-Top Electronics]
厂商主页:http://www.wontop.com/
文件大小:48.33KB,共3页
Sponsor by e络盟
器件资料摘要:
BA157 – BA159 1 of 3 © 2002 Won-Top Electronics
BA157 – BA159
1.0A FAST RECOVERY RECTIFIER
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability A B A
! High Reliability
! High Surge Current Capability
Mechanical Data C
! Case: Molded Plastic D
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
Maximum Ratings and Electrical Characteristics @T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol BA157 BA158 BA159 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
400 600 1000 V
RMS Reverse Voltage VR(RMS) 280 420 700 V
Average Rectified Output Current
(Note 1) @T
A
= 55°C
IO 1.0 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM 30 A
Forward Voltage @I
F
= 1.0A VFM 1.2 V
Peak Reverse Current @T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
IRM
5.0
100
µA
Reverse Recovery Time (Note 2) trr 150 250 500 nS
Typical Junction Capacitance (Note 3) Cj 15 pF
Operating Temperature Range Tj -65 to +125 °C
Storage Temperature Range TSTG -65 to +150 °C
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
WTE
POWER SEMICONDUCTORS
DO-41
Dim Min Max
A 25.4 —
B 4.06 5.21
C 0.71 0.864
D 2.00 2.72
All Dimensions in mm